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The Influence of Growth Duration Process on Morphology and Electrical Properties of SnO_2 Nanostructured Films

机译:生长持续时间过程对SnO_2纳米结构薄膜形态学和电性能的影响

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Tin oxide (SnO_2) nanostructured thin film with different immersion times was prepared on zinc oxide (ZnO) seeded catalyst using immersion method. The immersion times were varied at 3.0, 3.5 and 4.0 hours. Field emission scanning electron microscopy (FESEM) and two point probes current-voltage (I-V) measurements were used to study the surface morphology and electrical properties of SnO_2 nanostructured thin films. The diameter size of SnO_2 nanostructures which immersed at 3.0, 3.5 and 4.0 h were in range 10-20 nm, 20-30 nm and 30-50 nm, respectively. The results shows the highest electrical properties was at 3.0 h of immersion time.
机译:使用浸渍法在氧化锌(ZnO)播种催化剂上制备具有不同浸渍时间的氧化锡(SnO_2)纳米结构薄膜。浸入时间在3.0,3.5和4.0小时内变化。场发射扫描电子显微镜(FeSEM)和两点探针电流 - 电压(I-V)测量用于研究SnO_2纳米结构薄膜的表面形态和电性能。浸入3.0,3.5和4.0 h处的SnO_2纳米结构的直径尺寸分别为10-20nm,20-30nm和30-50nm。结果表明,最高电性能为3.0小时的浸入时间。

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