机译:在特殊预沉积层上制备的柱状CsI(Tl)闪烁膜的性能
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, PR China;
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, PR China;
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, PR China;
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, PR China;
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, PR China;
Shanghai Key Laboratory of Special Artificial Microstructure Materials & Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, PR China;
CsI(Tl) scintillation film; Pre-deposited layer; Solid-state dewetting; Columnar structure; Spatial resolution;
机译:象素柱状矩阵结构的CsI(Tl)闪烁膜的制备与性能
机译:具有单一优选取向的柱状CsI(Tl)闪烁膜的制备和性能
机译:膜厚对暴露于高γ射线剂量的柱状CsI:Tl膜闪烁特性的影响
机译:用于高分辨率射线照相和锥束CT的像素化柱状CsI:Tl闪烁体
机译:使用MOCVD制备的硫化锌:锰磷光体层的AC薄膜电致发光器件的制备和性能。
机译:用于iQID检测器的新型柱状CsI(Tl)闪烁体
机译:用于IQID探测器的新柱状CSI(TL)闪烁体
机译:在引入柱状缺陷之前和之后钉扎对Tl 2 Ba 2 Ca Cu 2 O 8薄膜临界动力学的影响