机译:退火氢化a-Si / a-Ge多层和层中结构和氢键构型的演变
CNR-IMEM Institute, Parco Area Delle Scienze 37/A, 43100 Parma, Italy;
Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary;
Institute of Nuclear Research of the Hungarian Academy of Sciences, P.O. Box 51, H-4001 Debrecen, Hungary;
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary;
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, H-1525 Budapest, Hungary;
CNR-IMEM Institute, Parco Area Delle Scienze 37/A, 43100 Parma, Italy;
Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary;
amorphous Si/Ge multilayer; hydrogen; annealing; IR absorption; blister;
机译:退火氢化a-Si / a-Ge多层膜中的氢释放
机译:非晶锗膜和多层A-GE / A-Si结构在暴露于纳秒激光辐射时的结晶
机译:使用快速能量转移退火使具有各种硅氢键构型的a-Si:H薄膜快速结晶
机译:氢化非晶碳 - 硅合金的μ-Raman光谱分析A-Si {Sub}}(1-x)(n):h {sub} y用作异结合太阳能电池结构中的发射器窗口层
机译:氢化非晶硅(a-Si:H)薄膜的低能电动力学。
机译:在退火的氢化非晶硅层中形成气泡
机译:在退火的氢化非晶硅层中形成气泡