机译:GaAs(001)预生长表面形貌和重构对InGaAs层生长的影响
College of Science, Guizhou University, Guiyang 550025, China;
College of Science, Guizhou University, Guiyang 550025, China,School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550004, China;
College of Science, Guizhou University, Guiyang 550025, China;
College of Science, Guizhou University, Guiyang 550025, China;
Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
College of Science, Guizhou University, Guiyang 550025, China,School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550004, China;
College of Science, Guizhou University, Guiyang 550025, China;
College of Science, Guizhou University, Guiyang 550025, China;
surface processes; scanning tunneling microscopy; reflection high energy electron diffraction; molecular beam epitaxy; semiconducting Ⅲ-Ⅴ materials;
机译:GaAs(001)表面InGaAs层生长过程中铟的偏析对RHEED振荡的影响
机译:GaAs(001)表面上依赖于酞菁铅层的重构生长
机译:脱落剂厚度对低温生长InGaAs / GaAs(001)层组成调节的影响
机译:邻近衬底Si(001)上的GaAs MBE:成核和生长条件对外延层的表面形态和晶体学性质的影响
机译:InGaAs / GaAs多量子阱中的缺陷产生:晶体和光学特性与外延生长条件的相关性。
机译:富GaAs(001)-4×6和As富GaAs(001)-2×4表面上三甲基铝原子层沉积的原子-原子相互作用:同步辐射辐射光发射研究
机译:截面扫描隧道显微镜研究超薄砷化镓中间层对InAs / InGaAsP / InP(001)量子点结构性能的影响
机译:基板表面重建对Fe在Gaas(001)上生长和磁性的影响2。杂志文章