机译:XPS,紫外-可见光谱和AFM研究Si面SiC晶片化学机械抛光(CMP)的去除机理
State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
State Key Laboratory of Tribology, Department of Mechanical Engineering, Building 9003, Tsinghua University, Beijing 100084, China Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,Shenzhen Key Laboratory of Micro/Nano Manufacturing, Research institute of Tsinghua University in Shenzhen, Shenzhen 518057, China;
Silicon carbide (SiC); Chemical mechanical polishing (CMP); Removal; XPS; UV-vis; Atomic step structure;
机译:AFM和XPS研究蓝宝石晶片化学机械抛光(CMP)过程中的材料去除机理
机译:轴向Si面6H-SiC晶片的化学机械抛光(CMP),以获得原子平坦的无缺陷表面
机译:使用浆液中的催化剂纳米粒子对轴向Si面SiC晶片进行化学机械平坦化(CMP)
机译:基于物理模型的晶圆化学机械抛光材料去除机理研究
机译:化学机械抛光(CMP)中材料去除机理的机械方面。
机译:超声化学机械抛光与超声研磨相结合的单晶碳化硅晶片材料去除及表面生成研究
机译:SiO2化学机械抛光(CMP)工艺的半经验材料去除率分布模型
机译:用于扫描电子显微镜的金属的新型自动电化学 - 机械抛光(ECmp)(后印刷)。