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首页> 外文期刊>Applied Surface Science >Hydrophobicity enhancement of Al_2O_3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment
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Hydrophobicity enhancement of Al_2O_3 thin films deposited on polymeric substrates by atomic layer deposition with perfluoropropane plasma treatment

机译:通过全氟丙烷等离子体处理原子层沉积提高聚合物基底上沉积的Al_2O_3薄膜的疏水性

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摘要

The optoelectronics devices such as organic light emitting diodes are greatly vulnerable to moisture, which reduces their functionality and life cycle. The Al_2O_3 thin films are mostly used as barrier coatings in such electronic devices to protect them from water vapors. The performance of the Al_2O_3 barrier films can be improved by enhancing their hydrophobicity. Greater the hydrophobicity of the barrier films, greater will be their protection against water vapors. This paper reports on the enhancement of hydrophobicity of Al_2O_3 thin films through perfluoropropane (C_3F_8) plasma treatment. Firstly, good quality Al_2O_3 films have been fabricated through atomic layer deposition (ALD) on polyethylene naphthalate (PEN) substrates at different temperatures. The fabricated films are then plasma treated with C_3F_8 to enhance their hydrophobicity. Hydrophobic Al_2O_3 thin films have shown good morphological and optical properties. Low average arithmetic roughness (Ra) of 1.90 nm, 0.93 nm and 0.88 nm have been recorded for the C_3F_8 plasma treated films deposited at room temperature (RT), 50 ℃ and 150 ℃, respectively. Optical transmittance of more than 90% has been achieved for the C_3F_8 plasma treated films grown at 50 ℃ and 150 ℃. The contact angle has been increased from 48° ± 3 to 158° ± 3 for the films deposited at RT and increased from 41° ±3 to 148° ±3 for the films deposited at 150℃.
机译:诸如有机发光二极管之类的光电子器件非常容易受潮,这降低了它们的功能性和使用寿命。 Al_2O_3薄膜主要用作此类电子设备中的阻挡涂层,以保护它们免受水蒸气的影响。通过增强Al_2O_3阻挡膜的疏水性可以提高其性能。阻挡膜的疏水性越大,它们对水蒸气的保护作用就越强。本文报道了通过全氟丙烷(C_3F_8)等离子体处理提高Al_2O_3薄膜的疏水性的方法。首先,在不同温度下,通过原子层沉积(ALD)在聚萘二甲酸乙二醇酯(PEN)衬底上制备了高质量的Al_2O_3薄膜。然后将制成的薄膜用C_3F_8等离子处理,以增强其疏水性。疏水的Al_2O_3薄膜具有良好的形貌和光学性质。对于在室温(RT),50℃和150℃下沉积的C_3F_8等离子体处理的薄膜,分别记录到1.90 nm,0.93 nm和0.88 nm的低平均算术粗糙度(Ra)。在50℃和150℃下生长的C_3F_8等离子体处理的薄膜的透光率达到90%以上。对于在室温下沉积的薄膜,接触角从48°±3增加到158°±3,对于在150℃下沉积的薄膜,接触角从41°±3增加到148°±3。

著录项

  • 来源
    《Applied Surface Science》 |2014年第30期|554-561|共8页
  • 作者单位

    Department of Mechatronics Engineering, Jeju National University, Jeju, 690-756, Republic of Korea;

    Department of Mechatronics Engineering, Jeju National University, Jeju, 690-756, Republic of Korea;

    Research Institute for Basic Sciences and Department of Physics, Jeju National University, Jeju, 690-756, Republic of Korea;

    School of Electronic Engineering, Jeju National University, Jeju, 690-756, Republic of Korea;

    Korean Institute of Machinery and Materials, Yuseong-Gu, Daejeon 305-343, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Al_2O_3; Atomic layer deposition; C_3F_8; Hydrophobicity; Contact angle; PEN;

    机译:Al_2O_3;原子层沉积;C_3F_8;疏水性接触角;钢笔;

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