首页> 外文期刊>Applied Surface Science >Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition
【24h】

Structural and magnetic properties in Mn-doped ZnO films prepared by pulsed-laser deposition

机译:脉冲激光沉积制备的Mn掺杂ZnO薄膜的结构和磁性

获取原文
获取原文并翻译 | 示例

摘要

We investigated the structural and magnetic properties of Zn_(0.95)Mn_(0.05)O films prepared on sapphire substrates by pulsed-laser deposition. Only low temperature ferromagnetism (Curie temperature lower than 50 K) was observed in Mn-doped samples, while pure ZnO film shows a typical paramagnetic behavior. Structural analyses indicate that the substitutional Mn~(2+) ions play a significant role for the low temperature ferromagnetism. Lattice defects such as V_0 and V_(ZN) were not proven to be effective factors for the origin of ferromagnetism in the films. The low temperature ferromagnetism might be interpreted as p-d hybridization from indirect coupling of Mn ions (Mn-O-Mn).
机译:我们研究了通过脉冲激光沉积在蓝宝石衬底上制备的Zn_(0.95)Mn_(0.05)O薄膜的结构和磁性。在掺杂锰的样品中仅观察到低温铁磁性(居里温度低于50 K),而纯ZnO膜表现出典型的顺磁行为。结构分析表明,取代的Mn〜(2+)离子对低温铁磁性起着重要作用。诸如V_0和V_(ZN)之类的晶格缺陷并未被证明是造成薄膜中铁磁性的有效因素。低温铁磁性可能被解释为由Mn离子(Mn-O-Mn)的间接耦合引起的p-d杂化。

著录项

  • 来源
    《Applied Surface Science》 |2014年第15期|42-46|共5页
  • 作者单位

    State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, No. 96,Jinzhai Road Hefei 230026, People's Republic of China;

    National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People's Republic of China;

    State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, No. 96,Jinzhai Road Hefei 230026, People's Republic of China;

    State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, No. 96,Jinzhai Road Hefei 230026, People's Republic of China;

    State Key Laboratory of Particle Detection and Electronics, University of Science and Technology of China, No. 96,Jinzhai Road Hefei 230026, People's Republic of China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Mn-doped ZnO films; Dilute magnetic semiconductors; Low temperature ferromagnetism;

    机译:锰掺杂的ZnO薄膜;稀释磁性半导体;低温铁磁性;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号