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首页> 外文期刊>Applied Surface Science >UV micro-imprint patterning for tunable light trapping in p-i-n thin-film silicon solar cells
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UV micro-imprint patterning for tunable light trapping in p-i-n thin-film silicon solar cells

机译:用于p-i-n薄膜硅太阳能电池中可调光陷阱的UV微压印图案

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摘要

In this paper, we used UV micro-imprint lithography periodic patterning combined with self-textured BZO films with a wide range of texture distributions for light trapping in thin-film silicon solar cells. It was found that the feature size of the periodic textures has a significant influence on the light trapping capacity of the glass substrate and the external quantum efficiency (EQE) of microcrystalline silicon (mu c-Si:H) solar cells. Microcrystalline silicon solar cells, deposited on periodic textures of 5 pm, showed an improved photocurrent density without any loss in the open-circuit voltage and fill factor; hence, resulting in an overall efficiency increase of 6.28%. (C) 2015 Elsevier B.V. All rights reserved.
机译:在本文中,我们将紫外线微压印光刻周期性图案与具有多种纹理分布的自纹理BZO膜结合使用,以捕获薄膜硅太阳能电池中的光。发现周期性纹理的特征尺寸对玻璃基板的光捕获能力和微晶硅(μc-Si:H)太阳能电池的外部量子效率(EQE)具有显着影响。沉积在5 pm的周期性纹理上的微晶硅太阳能电池显示出提高的光电流密度,而开路电压和填充因数没有任何损失。因此,整体效率提高了6.28%。 (C)2015 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Applied Surface Science》 |2015年第15期|14-18|共5页
  • 作者单位

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China|Hebei North Univ, Coll Sci, Zhangjiakou 075000, Hebei, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

    Hebei North Univ, Coll Sci, Zhangjiakou 075000, Hebei, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

    Hebei North Univ, Coll Sci, Zhangjiakou 075000, Hebei, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

    Nankai Univ, Key Lab Photo Elect Thin Film Devices & Technol T, Key Lab Optoelect Informat Sci & Technol, Inst Photoelect Thin Film Devices & Technol,Minis, Tianjin 300071, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Boron doped ZnO films; Surface morphology; Light trapping; Si thin film solar cells;

    机译:掺硼ZnO薄膜表面形貌捕光Si薄膜太阳能电池;

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