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首页> 外文期刊>Applied Surface Science >Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties
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Photo-induced insulator-metal transition in Pr0.6Ca0.4MnO3 thin films grown by pulsed laser deposition: Effect of thickness dependent structural and transport properties

机译:脉冲激光沉积生长的Pr0.6Ca0.4MnO3薄膜中的光诱导绝缘体-金属过渡:厚度依赖性结构和传输性能的影响

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摘要

We report photo-induced colossal magnetoresistive insulator-metal transition (IMT) in Pr0.6Ca0.4MnO3 thin films under much reduced applied magnetic field. The colossal effect was studied as a function of film thickness and thus with variable structural properties. Thorough structural, magnetic and magnetotransport characterization under light shows that the highest effect on the transition field can be obtained in the thinnest film (38 nm). However, due to the substrate induced strain of this film the required magnetic field for IMT is quite high. The best crystalline properties of the 110 nm film lead to the lowest IMT field under light and 10(9)% change in resistance at 10 K. With increasing thickness, the film properties start to move more toward the bulk material and, hence, IMT is no more observed under the applied field of 9 T. Our results indicate that for obtaining large photo-induced CMR, the best epitaxial quality of thin films is essential. (C) 2016 Elsevier B.V. All rights reserved.
机译:我们报告在大大减少的外加磁场下,Pr0.6Ca0.4MnO3薄膜中的光致巨磁致电阻绝缘体-金属跃迁(IMT)。研究了巨大效应与薄膜厚度的关系,因此具有可变的结构特性。在光下彻底的结构,磁和磁传输特性表明,在最薄的薄膜(38 nm)中可以获得对过渡场的最高效果。但是,由于该膜的基底引起的应变,IMT所需的磁场非常高。 110 nm膜的最佳结晶特性导致在光下的IMT场最低,并且在10 K时电阻变化为10(9)%。随着厚度的增加,膜特性开始更多地向块状材料移动,因此,IMT在9 T的应用场下不再观察到。我们的结果表明,要获得大的光诱导CMR,薄膜的最佳外延质量至关重要。 (C)2016 Elsevier B.V.保留所有权利。

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