Raman and X-Ray photoelectron spectroscopic studies of graphene devices for identification of doping

摘要

CTunability of electronic properties of graphene is one of the most promising properties to integrate it to high efficiency devices in the field of electronics. Here we demonstrate the substrate induced doping of CVD graphene devices using polymers with different functional groups. Both X-Ray secondary electron cut-off and Raman spectra confirm p-type doping of a PVC-Graphene film when compared to a PMMA-Graphene one. We also systematically analyzed the reversible doping effect of acid-base exposure and UV illumination to further dope/undope the polymer supported graphene devices. The shifts in the Raman 2D band towards lower and then to higher wavenumbers, with sequential exposure to ammonia and hydrochloric acid vapors, suggest n-type doing and restoration of graphene to its original state. Finally, the n-type doping with UV irradiation on half-covered samples was utilized and shown by both XPS and Raman to create two regions with different electronic properties and resistances. These type of controlled and reversible doping routes offer new paths for electronic devices especially towards fabricating graphene p-n junctions. (C) 2017 Elsevier B.V. All rights reserved.