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机译:HfO2在干净的2H-MoS2表面上的原位生长:生长模式,界面反应和能带对准
Natl Univ Singapore, Dept Phys, Elect Mat Growth & Interface Characterizat MaGIC, 2 Sci Dr 3, Singapore 117551, Singapore;
Natl Univ Singapore, Dept Phys, Elect Mat Growth & Interface Characterizat MaGIC, 2 Sci Dr 3, Singapore 117551, Singapore|Natl Univ Singapore, Singapore Synchrotron Light Source, 5 Res Link, Singapore 117603, Singapore;
Natl Univ Singapore, Dept Phys, Elect Mat Growth & Interface Characterizat MaGIC, 2 Sci Dr 3, Singapore 117551, Singapore|Yale NUS Coll, Coll Ave West, Singapore 138527, Singapore;
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
Natl Univ Singapore, Dept Phys, Elect Mat Growth & Interface Characterizat MaGIC, 2 Sci Dr 3, Singapore 117551, Singapore|ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way, Singapore 138634, Singapore;
Yale NUS Coll, Coll Ave West, Singapore 138527, Singapore;
Yale NUS Coll, Coll Ave West, Singapore 138527, Singapore|Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore;
Natl Univ Singapore, Dept Phys, Elect Mat Growth & Interface Characterizat MaGIC, 2 Sci Dr 3, Singapore 117551, Singapore|Yale NUS Coll, Coll Ave West, Singapore 138527, Singapore;
HfO2; MoS2; Band alignment; Space-charge effect; 2D TMD material; In-situ growth and interface study; High-k dielectric;
机译:原子层沉积的原位俄歇电子能谱研究:钌ALD在Si-H,SiO2和HfO2表面上的生长引发和界面形成反应
机译:原子层沉积的原位俄歇电子能谱研究:钌ALD在Si-H,SiO2和HfO2表面上的生长引发和界面形成反应
机译:InSb(111)A上的酞菁铜-界面键合,生长模式和能带对准
机译:表面能和界面运动的各种各向异性下晶粒长大行为的不连续有限元模拟
机译:热阶段环境SEM中氧化铁皮层级生长的原位形态学研究(氧化,粒重,表面能各向异性)
机译:MoS2 / HfO2界面上氮化对能带取向的研究
机译:InSb(111)A?界面键合铜酞菁,生长模式和能带对准