机译:半绝缘GaAs上Mg和Pt接触的比较研究:电学和XPS表征
SAS, Inst Elect Engn, Dubravska Cesta 9, SK-84104 Bratislava, Slovakia;
Inst Phys CAS, Vvi, Cukrovarnicka 10, CZ-16200 Prague, Czech Republic;
Inst Phys CAS, Vvi, Cukrovarnicka 10, CZ-16200 Prague, Czech Republic;
SAS, Inst Polymer, Dubravska Cesta 9, SK-84541 Bratislava, Slovakia;
Univ Ostrava, Dept Phys, Fac Sci, 30 Dubna 22, CZ-70103 Ostrava 1, Czech Republic;
SAS, Inst Elect Engn, Dubravska Cesta 9, SK-84104 Bratislava, Slovakia;
SAS, Inst Elect Engn, Dubravska Cesta 9, SK-84104 Bratislava, Slovakia;
IMEM CNR, Parco Area Sci 37-A, I-43010 Parma, Italy;
SUT, Fac Elect Engn & Informat Technol, Ilkovicova 3, SK-84219 Bratislava, Slovakia;
Acad Armed Forces, Dept Elect, Demanova 393, SK-03106 Liptovsky Mikulas, Slovakia;
Semi-insulating GaAs; Metal-semiconductor; M-S contact; Interface; Work function; Electrical charge transport; XPS;
机译:接触在热激发电流谱法表征半绝缘GaAs中深陷阱的作用
机译:接触在热激励电流谱法表征半绝缘GaAs中深陷阱的作用
机译:半绝缘GaAs上Pt与Mg接触的电荷收集效率
机译:MOCVD在半绝缘InP上生长的n-GaAs的电学和光学特性及其在MESFET器件的缺陷研究中的应用
机译:用于分子电子学中电荷传输研究的电触点的制造和表征。
机译:单结GaAs太阳能电池上溅射的二氧化硅氧化铟锡和二氧化硅/氧化铟锡抗反射涂层的电学和光学特性
机译:用于高功率Gaas / InGaas半导体激光器的au / pt / Ti / pt / Gaas欧姆接触的透射电子显微镜表征
机译:控制氧合成半绝缘金属有机气相外延Gaas的电学表征