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Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

机译：用于高功率Gaas / InGaas半导体激光器的au / pt / Ti / pt / Gaas欧姆接触的透射电子显微镜表征

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Łaszcz A.; Czerwinski A.; Ratajczak J.; Szerling A.; Phillipp F.; van Aken P.; Katcki J.;
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年度 2010
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正文语种 eng
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1. Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers [J] . A. LASZCZ, A. CZERWINSKI, J. RATAJCZAK Journal of Microscopy . 2010,第3期

机译：高功率GaAs / InGaAs半导体激光器的Au / Pt / Ti / Pt / GaAs欧姆接触的透射电子显微镜表征
2. Low-resistance p-type ohmic contacts for high-power InGaAs/GaAs-980 nm CW semiconductor lasers [J] . Szerling A, Karbownik P, Laszcz A, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2008,第10期

机译：用于高功率InGaAs / GaAs-980 nm连续波半导体激光器的低电阻p型欧姆接触
3. Low Resistance, Thermally Stable Au/Pt/Ti/WSiN Ohmic Contacts on n↑(+)-InGaAs-GaAs Layer Systems [J] . E. NEBAUER, M. MAI, E. RICHTER Journal of Electronic Materials . 1998,第7a12期

机译：n↑（+）-InGaAs / n-GaAs层系统上的低电阻，热稳定的Au / Pt / Ti / WSiN欧姆接触
4. Comparison of AuGe/NiAu, auGe/Pd/Au, Ti/Pt/Au, and WSi/Ti/PtAu ohmic contacts to n-type InGaAs [C] . S.H.Park, M.P.Park, T-W.Lee, International symposium on compound semiconductors . 1996

机译：AuGe / NiAu，auGe / Pd / Au，Ti / Pt / Au和WSi / Ti / PtAu欧姆接触与n型InGaAs的比较
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers [O] . Roura Grabulosa Pere, Clark S. A., Bosch Estrada José, 1995

机译：通过光学吸收和透射电子显微镜分析InGaAs / InP应变层中的应变不均匀性
8. Influence de l'Enrichissement Superficiel en Arsenic sur l'Ohmicite du Contact n-GaAs: In/Au (Influence of Arsenic Superficial Enrichment on the Ohmicity of the n-GaAs:In/Au Contact) [R] . Person, P. 1987

机译：影响de En'Inrichissement superficiel en arsenic sur l'Ohmicite du Contact n-Gaas：In / au（砷表面富集对n-Gaas欧姆的影响：In / au接触）

Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

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