机译:依赖于氩压的V薄膜对(020)VO2薄膜的相变过程的影响
Donghua Univ, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201600, Peoples R China;
Donghua Univ, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201600, Peoples R China;
Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China;
Donghua Univ, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201600, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China;
Donghua Univ, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201600, Peoples R China;
Donghua Univ, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201600, Peoples R China;
Donghua Univ, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201600, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China;
Argon pressure; Single crystal oriented VO2 thin film; Sputtering-oxidation coupling method; Metallic V thin film oxidation;
机译:M1相VO2和M2相VO2:Cr薄膜包覆的微悬臂梁的相变行为
机译:皮秒相变的单斜VO2薄膜的优化常压CVD
机译:相变过程中晶体取向对VO2薄膜电子能带结构和高临界点异常位移的影响
机译:基于VO2和GE掺杂VO2 ALD薄膜中绝缘子 - 金属相转变的射频温度传感器
机译:二氧化钒(VO2)薄膜的半导体到金属相转变
机译:脉冲激光沉积制备6H-SiC(0001)衬底上VO2薄膜的增强的相变特性
机译:皮秒相变的单斜VO2薄膜的优化常压CVD