首页> 外文期刊>Applied Surface Science >Aromatic structure degradation of single layer graphene on an amorphous silicon substrate in the presence of water, hydrogen and Extreme Ultraviolet light
【24h】

Aromatic structure degradation of single layer graphene on an amorphous silicon substrate in the presence of water, hydrogen and Extreme Ultraviolet light

机译:在水,氢和极紫外光存在下,非晶硅衬底上单层石墨烯的芳香结构降解

获取原文
获取原文并翻译 | 示例
           

摘要

In this paper we study the reaction of water and graphene under Extreme Ultraviolet (EUV) irradiation and in the presence of hydrogen. In this work, single layer graphene (SLG) on amorphous Si as an underlying substrate was dosed with water (0.75 mL) and exposed to EUV (lambda = 13.5 nm, 92 eV) with partial pressures of H-2 in the background. The results show that the aromatic structure of graphene, when exposed to EUV and H-2, breaks down into aryl ketones and enols of 1,3 di-ketone. Infrared (IR) spectroscopy shows that SLG oxidizes, with increasing H-2 pressure leading to the grain boundary edges of graphene forming ketones and carboxylic acids. In situ and post exposure analyses also reveal that EUV exposure reduces the sp(2) content of the graphene layer, with the sp(3) content increasing, resulting in a more defective graphene layer. (C) 2017 Elsevier B.V. All rights reserved.
机译:在本文中,我们研究了在极端紫外线(EUV)辐射下和氢存在下水与石墨烯的反应。在这项工作中,在无定形硅(作为底层衬底)上的单层石墨烯(SLG)用水(0.75 mL)计量,并暴露于EUV(λ= 13.5 nm,92 eV),背景分压为H-2。结果表明,石墨烯的芳族结构在暴露于EUV和H-2时会分解为芳基酮和1,3二酮的烯醇。红外(IR)光谱显示,随着H-2压力的升高,SLG被氧化,导致石墨烯的晶界边缘形成酮和羧酸。原位和后曝光分析还显示,EUV曝光会降低石墨烯层的sp(2)含量,同时sp(3)含量会增加,从而导致石墨烯层的缺陷更多。 (C)2017 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号