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A 10 GHz Y-Ba-Cu-O/GaAs hybrid oscillator proximity coupled to a circular microstrip patch antenna

机译:一个10 GHz Y-Ba-Cu-O / GaAs混合振荡器接近耦合到圆形微带贴片天线

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摘要

A 10-GHz hybrid Y-Ba-Cu-O/GaAs microwave oscillator proximity coupled to a circular microstrip antenna has been designed, fabricated, and characterized. The oscillator was a reflection mode type using a GaAs MESFET as the active element. The feedline, transmission lines, RF chokes, and bias lines were all fabricated from YBa/sub 2/Cu/sub 3/O/sub 7-x/ superconducting thin films on a 1-cm*1-cm lanthanum aluminate substrate. The output feedline of the oscillator was wire bonded to a superconducting feedline on a second 1 cm*1 cm lanthanum aluminate substrate, which was in turn proximity coupled to a circular microstrip patch antenna. Antenna patterns from this active patch antenna and the performance of the oscillator measured at 77 K are reported. The oscillator had a maximum output power of 11.5 dBm at 77 K, which corresponded to an efficiency of 10%. In addition, the efficiency of the microstrip patch antenna together with its high temperature superconducting feedline was measured from 85 K to 30 K and was found to be 71% at 77 K, increasing to a maximum of 87.4% at 30 K.
机译:已经设计,制造和表征了与圆形微带天线耦合的10 GHz混合Y-Ba-Cu-O / GaAs微波振荡器。振荡器为反射模式,使用GaAs MESFET作为有源元件。馈线,传输线,RF扼流圈和偏置线均由YBa / sub 2 / Cu / sub 3 / O / sub 7-x /超导薄膜在1-cm * 1-cm铝酸镧基板上制成。将振荡器的输出馈线引线键合到第二个1 cm * 1 cm铝酸镧基板上的超导馈线上,后者又耦合到圆形微带贴片天线。报告了该有源贴片天线的天线方向图和在77 K下测得的振荡器性能。该振荡器在77 K时的最大输出功率为11.5 dBm,相当于效率为10%。此外,微带贴片天线及其高温超导馈线的效率从85 K到30 K进行了测量,发现在77 K时为71%,在30 K时最高达到87.4%。

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