Inelastic resonance tunneling in S-Sm-S tunnel structures with s- and d-wave pairing in the electrodes

摘要

Inelastic resonant tunneling via localized states (LS) in an amorphous interlayer located between superconducting banks with s- and d-wave symmetry of the order parameters is studied theoretically. The developed theoretical model is applied to the description of high T/sub c/ Josephson junctions with semiconductor oxide interlayers. It is shown that the calculated form of the current-voltage characteristics and the temperature dependence of the zero bias conductivity fit the experimental data only if anisotropic pairing occurs in the S-banks.