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Spatially resolved measurements of HTS microwave surface impedance

机译:HTS微波表面阻抗的空间分辨测量

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We describe further development of a novel technique for the characterization of microwave properties of HTS films which allows the spatial variation of this important physical parameter to be measured. The method employs a dielectric puck system that can be moved over the surface of a large HTS wafer, sampling the surface impedance at a number of discrete frequencies between 5 and 15 GHz. The surface impedance can also be rapidly measured as a function of microwave magnetic field strength. Spatial resolution for the prototype system is as small as 1-2 mm. The surface resistance and the shift in surface reactance can be measured by using a loop oscillator which can be interrupted by a fast microwave switch. The decay of microwave power in the resonator is then monitored as a function of time to determine the power dependent surface impedance parameters. This process is extremely fast and straightforward and the loop oscillator configuration permits only relatively inexpensive components to be used. We describe measurements made at 11.5 GHz of the spatial variation of the non-linear surface impedance of a number of HTS films at 77 K
机译:我们描述了表征HTS薄膜微波特性的新技术的进一步发展,该技术允许测量这一重要物理参数的空间变化。该方法采用电介质圆盘系统,该系统可以在大型HTS晶圆的表面上移动,以5至15 GHz之间的多个离散频率对表面阻抗进行采样。还可以根据微波磁场强度快速测量表面阻抗。原型系统的空间分辨率小至1-2 mm。表面电阻和表面电抗的变化可以通过使用环形振荡器来测量,该环形振荡器可以通过快速微波开关中断。然后根据时间监视谐振器中微波功率的衰减,以确定与功率有关的表面阻抗参数。该过程非常快速和直接,并且环路振荡器配置仅允许使用相对便宜的组件。我们描述了在11.5 GHz处在77 K下对许多HTS膜的非线性表面阻抗的空间变化进行的测量

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