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Magnetic-field properties of high critical current density YBCO films deposited by TFA-MOD

机译:TFA-MOD沉积高临界电流密度YBCO薄膜的磁场特性

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The critical current density, Jc, of metal-organic deposition process using trifluoroacetates (TFA-MOD) based YBCO films was measured between 20 K and 77 K in magnetic fields up to 9.5 T as a function of the field direction. C-axis oriented YBCO films was deposited on LaAlO/sub 3/ single crystalline substrates and also on CeO/sub 2/ buffered IBAD (YSZ/Hastelloy) substrates by TFA-MOD method. The obtained Jc values at 77 K and 0 T were 7 and 1.7 MA/cm/sup 2/ for LaAlO/sub 3/ and IBAD substrates, respectively. High Jc values over 10/sup 5/ A/cm/sup 2/ were maintained up to 4 T (B//c-axis) for the LaAlO/sub 3/ substrate and up to 3 T (B//c-axis) for the CeO/sub 2/ buffered IBAD substrate. These results imply that TFA-MOD with simple fabrication process is very promising for the practical YBCO coated conductor. And the dependences on temperature and angular of the Jc at various external magnetic fields for some different thicknesses YBCO films was reported.
机译:使用基于三氟乙酸盐(TFA-MOD)的YBCO膜的金属有机沉积过程的临界电流密度Jc在20 K和77 K之间在磁场强度高达9.5 T的情况下作为磁场方向进行了测量。 C轴取向的YBCO薄膜通过TFA-MOD方法沉积在LaAlO / sub 3 /单晶衬底上,还沉积在CeO / sub 2 / IBAD缓冲衬底(YSZ / Hastelloy)上。对于LaAlO / sub 3 /和IBAD基板,在77 K和0 T下获得的Jc值分别为7和1.7 MA / cm / sup 2 /。对于LaAlO / sub 3 /基板,最高Jc值保持在10 / sup 5 / A / cm / sup 2 /以上,最高可保持4 T(B // c轴),最高可保持3 T(B // c轴) )用于CeO / sub 2 /缓冲IBAD底物。这些结果表明,具有简单制造工艺的TFA-MOD对于实际的YBCO涂层导体是非常有希望的。并报道了一些不同厚度的YBCO薄膜在各种外部磁场下对Jc的温度和角度的依赖性。

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