Photosensitivity of the (Si_2)_(1-x-y)(Ge_2)_x(GaAs)_y Solid Solution

摘要

Epitaxial layers of the p-type (Si_2)_(1-x-y)(Ge_2)_x(GaAs)_y solid solution (0 ≤ x ≤ 0.9 and 0 ≤ y ≤ 0.92) were grown by liquid-phase epitaxy from a limited volume of a Pb solution melt on n/Si substrates. The widening of the nSi- p(Si_2)_(1-x-y)(Ge_2)_x(GaAs)_y structure photosensitivity both to the short- and long-wavelengths of radiation spectrum compared to the nSi-pSi structure photosensitivity was revealed. At the GaAs content about 1-3 at.%, a sensitivity peak with the quantum energy hv ≈ 1.55 eV, which is likely conditioned by the GaAs level located 0.7 eV below the top of the base semiconductor valence band, was observed in the solid solution.