...
机译:双金属栅极叠层工程结累积圆柱围栏(DMGSE-CAM-CSG)MOSFET的分析建模
Department of Electronics and Communication Engineering Delhi Technological University Shahbad Daulatpur Delhi 110042 India;
Department of Electronics and Communication Engineering Delhi Technological University Shahbad Daulatpur Delhi 110042 India;
Department of Electronics and Communication Engineering Maharaja Agrasen Institute of Technology Rohini Delhi 110086 India;
Analytical model; Cylindrical surrounding gate; Junctionless accumulation mode; Parabolic potential approximation;
机译:用作生物传感器的介电调制无结栅叠层栅MOSFET(JLGSSRG)的分析建模和灵敏度分析
机译:考虑ECPE的双材料栅极工程纳米级无结环绕栅极MOSFET的亚阈值分析模型
机译:通过高k栅堆叠的长沟道圆柱形环绕栅MOSFET的直接隧穿电流的分析模型
机译:无连接累积模式圆柱围栏双金属栅极堆叠架构的模拟性能(DMGSA-CAM-CSG)MOSFET
机译:将超薄(1.6-2.0 nm)RPECVD堆叠的氧化物/氮氧化物栅极电介质集成到双多晶硅栅极亚微米CMOSFET中。
机译:采用无注入技术的全栅TiN / Al2O3堆叠结构的低温多晶硅纳米线无结器件
机译:Sub-10 nm结圆柱周围闸门MOSFET中排水辐射屏障的香料模型