Adsorbate-induced enhancement of the spectral response in graphene/silicon-based Schottky barrier photodetectors

摘要

The impact of atmospheric adsorbates on the spectral response and response speed of p-type graphene-type Silicon (p-Gr-Si) based Schottky barrier photodetectors are investigated. Wavelength resolved photocurrent and transient photocurrent spectroscopy measurements conducted under high-vacuum conditions revealed that the atmospheric adsorbates such as O_2 and H_2O stuck on graphene electrode lead to hole doping in graphene and therefore shift its Fermi level towards higher energy states below its Dirac point. Such a shift in graphene's Fermi level due to adsorbates increases the zero-bias Schottky barrier height of the p-Gr-Si heterojunction from 0.71 to 0.78 eV. Adsorbate induced increment in the barrier height promotes the separation of photo-generated charge carriers at the depletion region and leads to an improvement in the maximum spectral response (e.g., from 0.39 to 0.46 AW~(-1)) and response speed of the p-Gr-Si photodetector in the near-infrared region. The experimentally obtained results are expected to give an insight into the adsorbate related variations in the rectification and photo-response characters of the heterojunctions of graphene and other 2D materials with different semiconductors.