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Sensitive detection using heterostructure of black phosphorus, transition metal di-chalcogenides and MXene in SPR sensor

机译:使用黑色磷,过渡金属二硫芥子生成剂和SPR传感器中的MXENE异质结构的敏感性检测

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摘要

This work presents van der Waals heterostructure (vdWh) of Black phosphorus (BP)/Transition metal di-chalcogenides (TMDs)/MXene (Ti_3C_2T_x) based highly sensitive novel SPR sensor for biochemical sensing. 2D layered nature of BP, TMDs, and MXene allow them to form van der Waals heterostructure by vertically stacking them together to get exotic electronic and optical properties useful for surface plasmon resonance (SPR) sensing. Unique properties of MXene like its layered architecture, larger surface area, highly accessible hydrophilic surface terminations, chemical stability, smaller work function, and strong light-matter interaction are utilized to enhance the sensitivity of the proposed sensor. The proposed work theoretically analyzes its sensitivity (S) and compares it with other structures. The anisotropic nature of 2D layered BP is used to tune the sensitivity of the proposed sensor. The highest sensitivity of 388°/RIU is achieved at 633 nm wavelength for WS_2 tri-layer in the proposed biochemical sensor. The SPs field variation along normal to interface validates the highest sensitivity obtained for the proposed heterostructure SPR sensor through field plots. These results will open an innovative route to design and develop such an SPR biochemical sensor practically, with fabrication possibilities of MXene with TMDs and BP.
机译:这项工作介绍了基于高敏感的新型SPR传感器的黑磷(BP)/过渡金属二硫族化合物(TMDS)/ MxENE(TI_3C_2T_X)的van der WaaS异质结构(Vdwh)。 BP,TMD和MXENe的2D分层性质允许它们通过垂直堆叠它们在一起形成van der WaaS异结构,以获得对表面等离子体共振(SPR)感测的异国电子和光学性质。 MXEN的独特性质如其分层架构,较大的表面积,高度可接近的亲水性表面终端,化学稳定性,较小的功函数和强光物质相互作用,以增强所提出的传感器的灵敏度。拟议的工作理论上分析了其灵敏度并将其与其他结构进行比较。 2D层压BP的各向异性性质用于调整所提出的传感器的灵敏度。 388°/ RiU的最高灵敏度在所提出的生物化学传感器中的WS_2三层的633nm波长下实现。沿正常到界面的SPS场变化验证了通过场图对所提出的异质结构SPR传感器获得的最高灵敏度。这些结果将开设一个创新的设计路线,实际上,具有制造具有TMD和BP的MXENE的制造可能性。

著录项

  • 来源
    《Applied Physics》 |2020年第10期|809.1-809.10|共10页
  • 作者单位

    Department of Electronics Engineering National Institute of Technology (NIT) Uttarakhand 246174 U.K. India;

    Department of Electronics and Communication Engineering Institute of Engineering and Rural Technology Prayagraj 211002 U.P. India;

    Department of Electronics and Communication Engineering Motilal Nehru National Institute of Technology (MNNIT) Allahabad Prayagraj 211004 U.P. India;

    Department of Electronics and Communication Engineering Netaji Subhas University of Technology (NSUT) New Delhi 110078 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Mxene; Black phosphorus (BP); Anisotropy; Transition metal di-chalcogenides (TMDs); Surface plasmon resonance (SPR); Sensitivity; Van der waals heterostructures (vdWh);

    机译:mxene;黑磷(BP);各向异性;过渡金属二氯化合物(TMDS);表面等离子体共振(SPR);灵敏度;van der Waals异质结构(VDWH);

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