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首页> 外文期刊>Applied Physics >Growth and characterizaion of urea p-nitrophenol crystal: an organic nonlinear optical material for optoelectronic device application
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Growth and characterizaion of urea p-nitrophenol crystal: an organic nonlinear optical material for optoelectronic device application

机译:脲对硝基苯酚晶体的生长和表征:一种用于光电器件的有机非线性光学材料

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摘要

Urea p-nitrophenol, an organic nonlinear optical crystal was synthesized and grown adopting slow evaporation and seed rotation method. Single crystal X-ray diffraction study confirmed the formation of the desired crystal. High resolution X-ray diffraction study showed the defect nature of the crystal. The presence of functional groups in the material was confirmed by FTIR analysis. UV-Vis-NIR study indicates that the grown crystal has a wider transparency region with the lower cutoff wavelength at 423 nm. The grown crystal is thermally stable up to 120 A degrees C as assessed by TG-DTA analysis. The optical homogeneity of the grown crystal was confirmed by birefringence study. The 1064 nm Nd-YAG laser was used to obtain laser induced surface damage threshold which was found to be 0.38, 0.25 and 0.33 GW/cm(2) for (0 1 0), (1 1 - 1) and (0 1 1) planes, respectively. The dielectric study was performed to find the charge distribution inside the crystal. The hardness property of the titular material has been found using Vicker's microhardness study. The optical nonlinearity obtained from third order nonlinear optical measurements carried out using Z-scan technique showed that these samples could be exploited for optical limiting studies.
机译:通过缓慢蒸发和种子旋转法合成并生长了有机非线性光学晶体脲对硝基苯酚。单晶X射线衍射研究证实了所需晶体的形成。高分辨率X射线衍射研究显示了晶体的缺陷性质。通过FTIR分析确认了材料中官能团的存在。 UV-Vis-NIR研究表明,生长的晶体具有更宽的透明区域,并且在423 nm处具有较低的截止波长。通过TG-DTA分析评估,生长的晶体在高达120 A的温度下具有热稳定性。通过双折射研究证实了生长晶体的光学均匀性。使用1064 nm Nd-YAG激光获得激光诱导的表面损伤阈值,对于(0 1 0),(1 1-1)和(0 1 1),发现其为0.38、0.25和0.33 GW / cm(2) )平面。进行介电研究以发现晶体内部的电荷分布。使用维克显微硬度研究发现了滴定材料的硬度特性。使用Z扫描技术从三阶非线性光学测量获得的光学非线性表明,这些样本可用于光学极限研究。

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  • 来源
    《Applied Physics》 |2018年第6期|419.1-419.10|共10页
  • 作者单位

    Vellore Inst Technol Sch Adv Sci Div Phys Madras 600127 Tamil Nadu India;

    Vellore Inst Technol Sch Adv Sci Div Phys Madras 600127 Tamil Nadu India|Pachaiyappas Coll PG & Res Dept Phys MRDL Madras 600030 Tamil Nadu India;

    Pachaiyappas Coll PG & Res Dept Phys MRDL Madras 600030 Tamil Nadu India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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