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Investigation of magnetic and relaxor dielectric properties of polycrystalline gadolinium iron garnet by Bi substitution

机译:用Bi取代研究crystalline石榴石铁石榴石的磁性和弛豫介电性能。

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摘要

We have synthesized Bi-substituted gadolinium iron garnet [(Gd3-xBix)Fe5O12] samples with x=0, 0.5, and 1.0 and studied their structural, magnetic, and dielectric properties. All samples are found to be in single-phase form with cubic structure as per the Rietveld analysis based on Ia3d space group. Bi substitution leads to increase in lattice constant, Fe(a)-Fe(d) bond length and Fe(a)-O-Fe(d) bond angles, and they have direct influence on magnetic properties. All samples undergo ferrimagnetic transition followed by magnetic compensation behavior at low temperature. The ferrimagnetic transition temperature (T-c) is found to increase from 576K for x=0 to 596K for x=1.0. However, the magnetic compensation temperature (T-comp) decreases from 296 to 176K. They are explained in terms of increase in Fe(a)-O-Fe(d) bond angle and the dilution of magnetic moment at Gd site. The analysis of impedance spectra at room temperature and at higher temperature shows that Bi substitution gives rise to larger impedance due to the localization as well as reduction in the concentration of charge carriers. The activation energy of charge-carrier relaxation is found to be in the range of 0.9-1.0eV. The temperature variation of dielectric constant data and their analysis based on modified Curie-Weiss law show the relaxor ferroelectric transition with a typical diffuseness exponent, gamma close to 2.0.
机译:我们合成了x = 0、0.5和1.0的双取代g铁石榴石[(Gd3-xBix)Fe5O12]样品,并研究了它们的结构,磁性和介电性能。根据基于Ia3d空间群的Rietveld分析,发现所有样品均为立方结构的单相形式。 Bi取代导致晶格常数,Fe(a)-Fe(d)键长和Fe(a)-O-Fe(d)键角增加,并且它们直接影响磁性能。所有样品都经过亚铁磁跃迁,随后在低温下发生磁补偿行为。发现铁磁转变温度(T-c)从x = 0的576K增加到x = 1.0的596K。但是,磁补偿温度(T-comp)从296降低到176K。用Fe(a)-O-Fe(d)键角的增加和Gd位置处磁矩的稀释来解释它们。在室温和更高温度下的阻抗谱分析表明,Bi取代会由于定位以及电荷载流子浓度的降低而引起更大的阻抗。发现载流子弛豫的活化能在0.9-1.0eV的范围内。介电常数数据的温度变化及其基于修改后的居里-魏斯定律的分析表明,弛豫铁电跃迁具有典型的扩散指数,伽马系数接近2.0。

著录项

  • 来源
    《Applied Physics》 |2019年第8期|498.1-498.9|共9页
  • 作者

    Aakansha; Ravi S.;

  • 作者单位

    Indian Inst Technol Guwahati, Dept Phys, Gauhati 781039, Assam, India;

    Indian Inst Technol Guwahati, Dept Phys, Gauhati 781039, Assam, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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