In-plane dielectric characterization of sol-gel derived PLZT (9/65/35) thin films using an interdigital electrode configuration

摘要

Lead lanthanum zirconate titanate (PLZT 9/65/35) thin films were deposited on MgO (00l) substrates using a sol-gel method. X-ray diffraction measurements reveal that the PLZT film has epitaxially grown on the substrate and has a pure perovskite structure. Using gold interdigital electrodes the in-plane dielectric properties of the films were measured as a function of frequency (1 kHz to 10 GHz), temperature (293-435 K) and dc electric field (0-20 MV/m). The PLZT (9/65/35) thin film exhibits a diffuse phase transition, which indicates a relaxor-like ferroelectric behavior. The temperature dependence of the characteristic relaxation time was analyzed in terms of the Voegel-Fulcher relation. The relative permittivity has a high tunability of 34%-42% in the frequency range of 10 MHz to 1 GHz.