Pattern structures fabricated on ZnS-SiO_2/AgO_x/ZnS-SiO_2 thin film structure by laser direct writing technology

摘要

In this work, we used the multilayered ZnS-SiO_2/AgO_x/ZnS-SiO_2 films as the laser direct writing materials, and pattern structures with different shapes and sizes were directly written with green laser (λ = 488 nm). Compared with traditional photoresist materials, the pattern structures can be directly formed in this film structures without developing and etching procedures and also can be directly written by very low laser power. By tuning the laser parameters precisely, pattern structures with different sizes and shapes could be obtained as well. The analysis indicates that the formation mechanism of the pattern structure is mainly due to the volume expansion caused by AgO_x decomposition into silver particles and oxygen. The oxygen applies pressure to the ZnS-SiO_2 layer and makes a hollow shell under the film. The aspect ratios of the patterns rapidly increase from the minimum of 0.012 in laser power of 3.0 mW to the maximum of 0.201 in laser power of 5.0 mW. The thermal stability of the patterns was also qualitatively studied.