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机译:InAs / InxGa1-xAs量子点中的应变累积
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China,School of Material Science and Technology, Harbin Institute of Technology, Harbin, China;
School of Renewable Energy, North China Electric Power University, Beijing, 102206, China;
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China;
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China;
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China;
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China,School of Material Science and Technology, Harbin Institute of Technology, Harbin, China;
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China,School of Material Science and Technology, Harbin Institute of Technology, Harbin, China;
quantum dots; transition thickness; high resolution x-ray diffraction; reflection high energy electron diffraction; molecular beam epitaxy;
机译:菌株工程变质INAS / INXGA1-XAS量子点的激子禁闭
机译:InxGa1-xAs应变降低层对InAs / GaAs量子点影响的研究
机译:InxGa1-xAs量子阱覆盖的InAs / GaAs量子点的电子性质
机译:在InAlAs变质缓冲层上生长的2.5–3.0μm应变补偿InAs / InxGa1-xAs多量子阱激光器
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
机译:应变工程变质InAs / InxGa1-xAs量子点的激子约束