Reversible resistance switching properties in Ti-doped polycrystalline Ta_2O_5 thin films

摘要

Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta_2O_5 films with the device structure of Pt/Ti-Ta_2O_5/Pt. Results sug-gest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Ti-doped Ta_2O_5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resis-tance switching ratio than Ta_2O_5 thin films, where Ti addi-tion plays an important role in the resistance switching pro-cess by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O-vacancy complex. Ex-cellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.