Preparation of LCPMO thin films which have reversible resistance change properties

摘要

A method of forming a perovskite thin film includes preparing a perovskite precursor solution; preparing a silicon substrate for deposition of a perovskite thin film, including forming a bottom electrode on the substrate; securing the substrate in a spin-coating apparatus and spinning the substrate at a predetermined spin rate; injecting a perovskite precursor solution into the spin-coating apparatus thereby coating the substrate with the perovskite precursor solution to form a coated substrate; baking the coated substrate at temperatures which increase incrementally from about 90°C to 300°C; and annealing the coated substrate at a temperature of between about 500°C to 800°C for between about five minutes to fifteen minutes.