Quantum well intermixing of multiple quantum wells on InP by argon plasma bombardment and the sputtered-SiO_2 film

摘要

A quantum well intermixing process combining inductively-coupled-plasma reactive ion etching (ICP-RIE) and SiO_2 sputtering film was investigated for the InGaAsP and InGaAlAs multi-quantum wells (MQWs). Optimal distance is 300-nm-thick for InGaAsP and of 200-nm-thick for InGaAlAs. Between MQWs and the upper cladding by ICP-RIE and bombardment, covering the 300-nm-thick sputtered SiO_2 using rapid thermal annealer (RTA) processing resulted in a band-gap blue-shift of 90 nm for InGaAsP and of 60 nm for InGaAlAs.