Evaluating the coupling strength of electron-hole pairs and phonons in a 0.9 μm-wavelength silicon light emitting diode using dressed-photon-phonons

摘要

We investigated the coupling strength between electron-hole pairs and phonons in a silicon light emitting diode (Si-LED) fabricated by dressed-photon-assisted annealing. This Si-LED emitted light in the 1.4 eV photon energy (0.9 μm wavelength) band, and phonon sidebands were observed in the emission spectrum. From a comparison with simulation results, these sidebands were found to be due to coupling of electron-hole pairs with LO-mode and TO-mode coherent phonons via dressed-photon-phonons. The value of the Huang-Rhys factor, 5, representing the coupling strength between the electron-hole pairs and the phonons was estimated to be 4.08 ± 0.02.