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机译:具有AlGaN / AlGaN超晶格电子阻挡层的深紫外AlGaN发光二极管的优势
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
机译:[邀请]特殊的AlGaN分级超晶格孔和电子阻挡层提高了基于AlGaN的紫外线发光二极管的性能
机译:具有特殊设计的AlGaN超晶格空穴和电子阻挡层的AlGaN基紫外发光二极管的高效改进
机译:具有Al含量渐变的AlGaN电子阻挡层的基于AlGaN的310 nm紫外发光二极管的优势
机译:绿色InGaN发光二极管中使用超晶格AlGaN / InGaN作为电子阻挡层的数值分析
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:具有高镁掺杂效率的特别设计的超晶格p型电子阻挡层的几乎无效率下降的基于AlGaN的紫外线发光二极管
机译:具有AlGaN / GaN / AlGaN量子阱结构的电子阻挡层的蓝色InGaN / GaN发光二极管的优势