Thermally induced interfacial reactions in Ti/Pd/Si and Ti/Pd/Si(As) ternary systems

摘要

In this work, we investigate the effect of temperature on the ternary systems Ti/Pd/Si and Ti/Pd/Si(As) and the phases formed at the interfaces of each system. For this purpose, thin layers of palladium and titanium were evaporated successively on monocrystalline silicon substrates of (111) orientation and also the same system with the silicon substrate being previously implanted with arsenic ions at a flux of 1, 5.10~(16) at/cm~2 and an accelerating energy of 100 keV. These samples were then thermally treated, in a conventional oven under vacuum, in the temperature range between 700 and 950 ℃ for 30 min for each annealing temperature. The obtained samples were analyzed by several characterization techniques, namely Rutherford backscattering spectroscopy, X-ray diffraction and scanning electron microscopy.