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Low-temperature and solution-processed indium tin oxide films and their applications in flexible transparent capacitive pressure sensors

机译:低温固溶处理的铟锡氧化物薄膜及其在柔性透明电容式压力传感器中的应用

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摘要

It is of great interest to fabricate indium tin oxide (ITO) films by solution-based techniques at low temperatures. Here, we combined the use of colloidal ITO nanoflowers synthesized by the strategy of limited ligand protection and oxygen plasma treatment which effectively remove the surface ligands of ITO nanocrystals to meet this goal. These efforts led to high-quality ITO films with resistivity as low as 2.33 × 10~(-2) Ω cm, which is the best result for solution-processed ITO nanocrystal films deposited at temperatures lower than 200 ℃. The annealing-free processing allowed us to deposit ITO nanoflower films onto plastic substrates and apply them in flexible capacitive pressure sensors. The single-pixel device showed decent sensitivity and reproducibility, and the arrayed sensors exhibited good spatial resolution.
机译:通过基于溶液的技术在低温下制造铟锡氧化物(ITO)膜非常受关注。在这里,我们结合使用通过有限的配体保护和氧等离子体处理策略合成的胶体ITO纳米花,可以有效去除ITO纳米晶体的表面配体,从而达到此目的。这些努力导致了电阻率低至2.33×10〜(-2)Ωcm的高质量ITO膜,这是在低于200℃的温度下沉积的溶液处理ITO纳米晶体膜的最佳结果。免退火处理使我们能够将ITO纳米花膜沉积到塑料基板上,并将其应用于柔性电容式压力传感器中。单像素设备显示出不错的灵敏度和可重复性,并且阵列传感器显示出良好的空间分辨率。

著录项

  • 来源
    《Applied Physics》 |2016年第2期|424.1-424.6|共6页
  • 作者单位

    State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China;

    Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China;

    State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    Center for Chemistry of High-Performance and Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China;

    Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China;

    State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China ,Center for Chemistry of High-Performance and Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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