Novel approach to passivation of InAs/GaSb type II superlattice photodetectors

摘要

The innovative two-step passivation by octadecanethiol (ODT) self-assembled monolayers (SAMs) and the following silicon dioxide (SiO2) deposition was used for the type-II InAs/GaSb superlattice photodetector. To understand the mechanism of passivation, the (100) GaSb surface covered with the ODT and, for comparison, with the biphenyl thiol (BPT), was characterized by the atomic force microscopy, Raman spectroscopy and contact angle analysis. The results of the study indicated the presence of the homogeneous both the ODT and the BPT monolayers; however, the ODT SAMs were more stable. Therefore, the ODT-based wet treatment was used in the two-step passivation resulting in a reduction of the dark current by one order of magnitude for passivated detector compared with an unpassivated device.