Optical study of single InAs on In_(0.12)Ga_(0.88)As self-assembled quantum dots: biexciton binding energy dependence on the dots size

摘要

Single self-assembled InAs quantum dots embedded in a In_(0.12)Ga_(0.88)As quantum well and emitting in the near infrared have been optically investigated. The dependence on the excitation power of the single quantum dot photolumines-cence has been used to identify the emission of the biexciton complex. The biexciton binding energy, which has been measured for a dozen dots, increases with increasing exciton transition energy for the dot sizes investigated in the present work, as a consequence of stronger confinement in a smaller quantum dot. The obtained data is compared with experimental results available in the literature for InAs quantum dots.