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High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns

机译:高电光效率的180 W调Q 532 nm激光器,脉冲宽度为70 ns

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摘要

A compact straight cavity with two side-pumped Nd:YAG laser heads and a 90° quartz rotator in between is presented. By intracavity-frequency-doubling with a type II LBO crystal in this cavity, an output power of 180.2 W at 532 nm with a repetition rate of 10 kHz was achieved, corresponding to an electrical-to-optical efficiency of 10.9%. To best of our knowledge, this is the highest electrical-to-optical efficiency of the high power green lasers with above 100 W output power, ever reported. The pulsewidth was 70 ns and the peak power was 257.4 kW. The beam parameter product (beam waist multiplied by half beam divergence angle) was estimated to be 4.2 mmmrad and the power fluctuation over 2.5 hours was calculated to be better than ±1.2%.
机译:提出了具有两个侧面泵浦Nd:YAG激光头和介于两者之间的90°石英旋转器的紧凑型直腔。通过在该腔中使用II型LBO晶体进行腔内倍频,在532 nm处的输出功率为180.2 W,重复频率为10 kHz,对应的电光效率为10.9%。据我们所知,这是有史以来报道的输出功率高于100 W的高功率绿色激光器的最高电光效率。脉冲宽度为70 ns,峰值功率为257.4 kW。束参数乘积(束腰乘以半束发散角)估计为4.2 mmmrad,并且计算得出的2.5小时内的功率波动优于±1.2%。

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  • 来源
    《Applied physics》 |2011年第4期|p.861-866|共6页
  • 作者单位

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China,Graduate University of Chinese Academy of Sciences, Beijing100080, China;

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China,Graduate University of Chinese Academy of Sciences, Beijing100080, China;

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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