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Laser-triggered current gating based on photothermal effect in VO_2 thin-film device using CO_2 laser

机译:基于CO_2激光的VO_2薄膜器件中基于光热效应的激光触发电流门控

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摘要

By incorporating a CO2 laser centered at similar to 10.6 mu m, a laser-triggered current gating of up to 50 mA was demonstrated in a two-terminal planar device based on a vanadium dioxide (VO2) thin film grown by a pulsed laser deposition method. The laser-triggered current on/off gating was realized by controlling the beam power of the CO2 laser to excite the VO2 device. The transient responses of the laser-triggered currents were investigated when periodical laser pulses from the CO2 laser stimulated the VO2 device at a variety of pulse widths and repetition rates. A switching contrast between off- and on-state currents was calculated as similar to 12,195, and average rising and falling times were measured as similar to 37 and similar to 23 ms, respectively.
机译:通过并入以大约为10.6微米为中心的CO2激光器,在基于通过脉冲激光沉积法生长的二氧化钒(VO2)薄膜的两端平面器件中,证明了高达50 mA的激光触发电流门控。激光触发的电流开/关门控是通过控制CO2激光的光束功率来激发VO2器件来实现的。当来自CO2激光器的周期性激光脉冲以各种脉冲宽度和重复频率刺激VO2器件时,研究了激光触发电流的瞬态响应。计算出断态电流和导通状态电流之间的开关对比度约为12,195,平均上升和下降时间分别约为37 ms和23 ms。

著录项

  • 来源
    《Applied physics》 |2018年第4期|67.1-67.9|共9页
  • 作者单位

    Pukyong Natl Univ, Sch Elect Engn, 45 Yongso Ro, Busan 48513, South Korea;

    Pukyong Natl Univ, Interdisciplinary Program Biomed Mech & Elect Eng, 45 Yongso Ro, Busan 48513, South Korea;

    Mobrik Co Ltd, 218 Gajeong Ro, Daejeon 34129, South Korea;

    Pukyong Natl Univ, Sch Elect Engn, 45 Yongso Ro, Busan 48513, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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