The electronic properties of two-dimensional hexagonal germanium, so called germanene, are investigated using first-principles simulations. Consistent with previous reports, the surface is predicted to have a “poor” metallic behavior, i.e., being metallic with a low density of states at the Fermi level. It is found that biaxial compressively strained germanene is a gapless semiconductor with linear energy dispersions near the K points—like graphene. The calculated Fermi velocity of germanene is almost independent of the strain and is about 1.7×106 m/s, quite comparable to the value in graphene.
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机译：使用第一性原理模拟研究了二维六方锗锗（所谓的锗烯）的电子性质。与先前的报告一致，预测该表面具有“较差”的金属性能，即，在费米能级下具有低状态密度的金属。发现双轴压缩应变锗烯是一种无间隙的半导体，在K点附近具有线性能量分散，就像石墨烯一样。计算出的锗烯费米速度几乎与应变无关，约为1.7×106 m / s，与石墨烯中的值相当。
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