Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices

摘要

Zinc nitride films were used as an active layer in thin film transistors to assess its performance in optoelectronic applications. Those nitride layers were grown by radio-frequency magnetron sputtering in Ar/N2 ambient using a Zn target. Bottom- and top-gate thin film transistors were fabricated by photolithography processes. Transmission measurements for these particular layers showed an absorption edge around 1.3 eV. Normally off transistor characteristics with a threshold voltage of 6 V were obtained in the bottom-gate configuration without post-growth annealing. In the saturation region, those transistors produced enhanced output characteristics under illumination with infrared/visible light.