Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons

摘要

The radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence ΦP up to 3.75 × 1012 cm-2 or, equivalently, a total ionizing dose = 500 kRad (Si). At this ΦP, an ∼31% drop in quantum efficiency η, ∼2 order increase in dark current density JD, and consequently, >1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.