Radiation tolerance characterization of dual band InAs/GaSb type-Ⅱ strain-layer superlattice pBp detectors using 63 MeV protons

摘要

The radiation tolerance characterization of dual band InAs/GaSb type-Ⅱ strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors' mid-wave infrared performance degraded with increasing proton fluence Φ_P up to 3.75 × 10~(12)cm~(-2) or, equivalently, a total ionizing dose = 500 kRad (Si). At this Φ_P, an ～31% drop in quantum efficiency η, ～2 order increase in dark current density J_D, and consequently, > 1 order drop in calculated detectivity D* were observed. Proton damage factors were determined for η and D*. Arrhenius-analysis of temperature-dependent J_D measurements reflected significant changes in the activation energies following irradiation.