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Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers

机译:将金属锰掺入用作铜扩散阻挡层的钌薄膜中的化学和结构研究

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摘要

The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese (∼1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO2 structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO2 substrate to form manganese-silicate (MnSiO3), implying the migration of the metal through the Ru film. Electron energy loss spectroscopy line profile measurements of the intensity of the Mn signal across the Ru film confirm the presence of Mn at the Ru/SiO2 interface.
机译:提出将锰掺入3 nm钌薄膜中是改善其作为铜扩散阻挡层性能的潜在机制。锰(〜1 nm)沉积在原子层沉积的Ru膜上,随后对Mn / Ru / SiO2结构进行热退火。 X射线光电子能谱研究表明Mn与SiO2衬底发生化学反应形成硅酸锰(MnSiO3),这意味着金属通过Ru膜迁移。通过Ru膜上的Mn信号强度的电子能量损失谱线轮廓测量,证实了Ru / SiO 2界面处存在Mn。

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