Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

摘要

We have investigated electron transport in Nb doped SrTiO3 single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO2 terminated n-type SrTiO3. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.