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Effect of Nb concentration on the spin-orbit coupling strength in Nb-doped SrTiO3 epitaxial thin films

机译:Nb浓度对掺Nb的SrTiO3外延薄膜自旋轨道耦合强度的影响

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摘要

Several oxide materials have attracted much interest for the application in spintronic devices due to unusual properties originating from the strongly correlated orbital and spin degrees of freedom. One missing part in oxide spintronics is a good spin channel featured by strong spin-orbit coupling (SOC) which enables an efficient control of the electron’s spin. We have systematically investigated the dependence of the SOC strength of Sr(NbxTi1−x)O3 thin films on Nb concentration (nNb = 2~20 at. %) as a deeper exploration of a recent finding of the strong SOC in a heavily Nb-doped SrTiO3 (Sr(Nb0.2Ti0.8)O3) epitaxial film. Apart from a finding of a proportionality of the SOC to nNb, we have observed an intriguing temperature dependence of the SOC strength and the anisotropic magnetoresistance (MR) in the intermediate nNb region. These phenomena are associated with the temperature dependence of Landé g-factor and the change of the band structure, which is consistent with the result of density functional theory (DFT) calculation.
机译:由于源自强烈相关的轨道和自旋自由度的不同寻常的性质,几种氧化物材料吸引了人们在自旋电子设备中的广泛应用。氧化物自旋电子学中缺少的一个部分是良好的自旋通道,该通道具有强大的自旋轨道耦合(SOC),可有效控制电子的自旋。我们已经系统地研究了Sr(NbxTi1-x)O3薄膜的SOC强度对Nb浓度(nNb = 2〜20 at。%)的依赖性,作为对最近发现的重Nb-中强SOC的更深入探索。掺杂的SrTiO3(Sr(Nb0.2Ti0.8)O3)外延膜。除了发现SOC与nNb成比例外,我们还观察到了中间nNb区域中SOC强度和各向异性磁阻(MR)的有趣温度依赖性。这些现象与朗德g因子的温度依赖性和能带结构的变化有关,这与密度泛函理论(DFT)计算的结果一致。

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