Probing the nature of carrier localization in GaInNAs epilayers by optical methods

摘要

Photoluminescence (PL), optical pumping, and reflectance studies of nominally undoped and p-type GaInNAs epilayers are presented. The PL peak energy of the nominally undoped sample exhibits an S-shaped dependence on temperature for T < 50 K. This is attributed to recombination of bound excitons localized on traps. The energy of the PL circular-polarization maximum coincides with the energy of the free-exciton related reflectance feature at all temperatures. In heavily p-type samples the S-shaped temperature-dependence of the PL energy disappears, and the PL peak and circular polarization maximum coincide with the reflectance feature at all temperatures, indicating that the PL is free-exciton-like.