机译:Si掺杂GaAsN / GaAs外延层中的光学表征和载流子在局域态和离域态之间转移
Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct LMON, Monastir 5000, Tunisia|King Khalid Univ, Coll Sci, Dept Phys, Al Greigar Abha, Saudi Arabia;
Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct LMON, Monastir 5000, Tunisia;
Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct LMON, Monastir 5000, Tunisia;
Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct LMON, Monastir 5000, Tunisia;
Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct LMON, Monastir 5000, Tunisia;
King Khalid Univ, Coll Sci, Dept Phys, Al Greigar Abha, Saudi Arabia;
Diluted GaAsN; Decay time; Radiative recombination; Transfer time;
机译:GaAsN稀合金中态的光密度:自由激子和局部和离域态杂质带的共存
机译:载流子定位对MBE生长的GaAsN / GaAs异质结构光学性质的影响
机译:通过在界面中添加Sb通量来改善InGaAsN / GaAs单量子阱中载流子定位的光学特性
机译:GAASN / GAAs中局部和中断状态的光学研究
机译:GaAs / AlGaAs双极晶体管波导结构载流子注入的光调制器/开关查看用法统计
机译:分子束外延生长GaAsSb外延层中的局部状态研究
机译:II型GaAsSb / GaAs量子阱中离域态与局部态之间的载流子动力学
机译:Gaas多量子阱结构中的受激光子回波和自由极化衰减:局域和离域激子的证据