Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting

摘要

We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface.