Long electron spin coherence in ion‐implanted GaN: The role of localization

摘要

The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is studied by time‐resolved Kerr‐rotation spectroscopy. The spin relaxation time increases strongly by up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition from delocalized to localized electrons. We find a characteristic change in the magnetic field dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.